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| Patent Name：Adaptive off tester screening method based on intrinsic die parametric measurements |
| Country：[CN] |
Patent ID：[6807655] |
| Remarks： |
A method for adaptively providing parametric limits to identify defective die quantizes the die into a plurality of groups according to statistical distributions, such as intrinsic speed in one embodiment. For each quantization level, an intrinsic distribution of the parameter is derived. Adaptive screening limits are then set as a function of the intrinsic distribution. Dies are then screened according to their parametric values with respect to the adaptive limits. |
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| Patent Name：Production of pectin from soybeans |
| Country：[US] |
Patent ID：[6,787,177] |
| Remarks： |
A novel process for extracting pectin from waste hull/hypocotyl streams during soybean processing is described. Chemical extracting agents in addition to or in conjunction with heat and agitation are used to extract pectin from the waste streams. The pectin is then precipitated in alcohol, washed and dried. A process for whitening the extracted pectin is also described.
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| Patent Name：Chemical vapor deposition method of making layered |
| Country：[US] |
Patent ID：[6,787,181] |
| Remarks： |
A method of forming a Bi-layered superlattice material on a substrate using chemical vapor deposition of a precursor solution of trimethylbismuth and a metal compound dissolved in an organic solvent. The precursor solution is heated and vaporized prior to deposition of the precursor solution on an integrated circuit substrate by chemical vapor deposition. No heating steps including a temperature of 650.degree. C. or higher are used.
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| Patent Name：Consolidated amorphous carbon materials, their man |
| Country：[US] |
Patent ID：[6,787,235] |
| Remarks： |
A carbon based material produced from the consolidation of amorphous carbon by elevated temperature compression. The material having unique chemical and physical characteristics that lend themselves to a broad range of applications such as in electrical, electrochemical and structural fields. |
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| Patent Name：Method for the formation of RuSixOy-containing bar |
| Country：[CN] |
Patent ID：[6,787,449] |
| Remarks： |
A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSi.sub.x O.sub.y, where x and y are in the range of about 0.01 to about 10. The barrier layer may be formed by depositing RuSi.sub.x O.sub.y by chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the barrier layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSi.sub.x O.sub.y from the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer. Semiconductor structures and devices can be formed to include diffusion barrier layers formed of RuSi.sub.x O.sub.y.
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| Patent Name：Chemical vapor deposition methods, and atomic laye |
| Country：[US] |
Patent ID：[6,787,463] |
| Remarks： |
The invention includes reactive gaseous deposition precursor feed apparatus and chemical vapor deposition methods. In one implementation, a reactive gaseous deposition precursor feed apparatus includes a gas passageway having an inlet and an outlet. A variable volume accumulator reservoir is joined in fluid communication with the gas passageway. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a deposition chamber. A first deposition precursor is fed to an inlet of a variable volume accumulator reservoir. With the first deposition precursor therein, volume of the variable volume accumulator reservoir is decreased effective to expel first deposition precursor therefrom into the chamber under conditions effective to deposit a layer on the substrate.
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| Patent Name：Method for laser induced isotope enrichment |
| Country：[US] |
Patent ID：[6,787,723] |
| Remarks： |
Methods for separating isotopes or chemical species of an element and causing enrichment of a desired isotope or chemical species of an element utilizing laser ablation plasmas to modify or fabricate a material containing such isotopes or chemical species are provided. This invention may be used for a wide variety of materials which contain elements having different isotopes or chemical species. |
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| Patent Name：Mass analyzing method using an ion trap type mass |
| Country：[JP] |
Patent ID：[6,787,767] |
| Remarks： |
The present invention provides a method of discriminating singly-charged ions from multiply-charged ions by the use of an ion trap type mass spectrometer which is an inexpensive mass spectrometer. This is achieved by a mass-analyzing method using an ion trap type mass spectrometer equipped with a ring electrode and one pair of end cap electrodes and temporarily traps ions in a three-dimensional quadrupole field to mass-analyze a sample. The method includes a first step of applying a main high frequency voltage to the ring electrode to form a three-dimensional quadrupole field, a second step of generating ions in the mass analyzing unit or injecting ions from the outside and trapping ions of a predetermined mass-to-charge ratio range in the mass analyzing unit, a third step of applying a supplementary AC voltage having a plurality of frequency components between the end cap electrodes and scanning the frequency components of the supplementary AC voltage, and a fourth step of scanning the main high frequency voltage and ejecting ions from the mass analyzing unit and detecting thereof. With this, chemical noises can be reduced dramatically. |
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| Patent Name：Interfacial oxide in a transistor |
| Country：[US] |
Patent ID：[6,787,879] |
| Remarks： |
According to a disclosed embodiment, a gas is supplied at a certain partial pressure for a chemical reaction with a top surface of a base in a transistor. The top surface of the base is heated to a certain temperature to promote the chemical reaction. For example, the gas can be oxygen, the base can be an epitaxial single crystal silicon-germanium base of a heterojunction bipolar transistor ("HBT"), and the chemical reaction can be oxidation of the silicon in the top surface of the silicon-germanium base. In one embodiment of the invention, the partial pressure of oxygen is maintained at 0.1 atmosphere and the top surface of the base is heated using rapid thermal processing ("RTP") to a temperature of 500.degree. C. The chemical reaction forms a dielectric layer on the top surface of the base. For example, using oxygen as stated above, a dielectric layer of silicon oxide ("interfacial oxide") is formed. Controlling the thickness and density of the interfacial oxide causes the gain of the transistor to be as desired. For example, using oxygen in the silicon-germanium HBT at 0.1 atmosphere partial pressure, and RTP to heat the top surface of the base of the HBT to 500 C, an interfacial oxide is formed with thickness approximately 9.0 to 13.0 Angstroms and area density in a range of approximately 1*10.sup.15 to 4*10.sup.15 atoms per square centimeter, which causes the gain of the HBT to be the desired value of approximately 100.0. |
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