| SUBJECT： |
International Conference on Silicon Carbide and Related Materials 2013 |
| DATE： |
2013-09-29 |
| LOCATION： |
Miyzaki, Japan, Asia |
| CONTENT： |
Official Information:
The aim of the conference is to discuss recent advances in theoretical and experimental investigations of crystal growth, characterization and control of material properties, as well as other basic research issues concerning wide bandgap semiconductors such as silicon carbide (SiC), III-nitrides, diamond and their related materials such as graphene.
New research results relevant to wafer production processes, device fabrication technologies and device applications will also be presented and discussed. The objective is to promote the production and commercialization of advanced devices and systems used for low on-resistance - high voltage switching, high frequency - high power amplification and high temperature operation.
The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.
Fundamentals (Theoretical and Experimental)
Bulk and Epitaxial Growth
Material Characterization
Surfaces and Interfaces
Device Fabrication Processes
Devices (Power switching, RF power, High temperature, Radiation-Resistant Devices, etc.)
Device Physics (Measurement, Modeling, Simulation, and Reliability)
Packaging, Modular, and Circuit Technology
System Application. |
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| Promulgator Detail |
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| Address: |
Miyzaki, Japan, Asia |
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